TIPL760B, tipl760c npn silicon power transistors
1 may 1989 - revised september 2002 specifications are subject to change without notice. rugged triple-diffused planar construction 4 a continuous collector current operating characteristics fully guaranteed at 100c 1200 volt blocking capability 75 w at 25c case temperature absolute maximum ratings at 25c case temperature (unless otherwise noted) note 1: this value applies for t p 10 ms, duty cycle 2%. rating symbol value unit collector-base voltage (i e = 0) TIPL760B tipl760c v cbo 1100 1200 v collector-emitter voltage (v be = 0) TIPL760B tipl760c v ces 1100 1200 v collector-emitter voltage (i b = 0) TIPL760B tipl760c v ceo 500 550 v emitter-base voltage v ebo 10 v continuous collector current i c 4a peak collector current (see note 1) i cm 8a continuous device dissipation at (or below) 25c case temperature p tot 75 w operating junction temperature range t j -65 to +150 c storage temperature range t stg -65 to +150 c b c e to-220 package (top view) pin 2 is in electrical contact with the mounting base. mdtraca 1 2 3
TIPL760B, tipl760c npn silicon power transistors 2
may 1989 - revised september 2002 specifications are subject to change without notice. notes: 2. inductive loop switching measurement. 3. these parameters must be measured using pulse techniques, t p = 300 s, duty cycle 2%. 4. these parameters must be measured using voltage-sensing contacts, separate from the current carrying conta cts. ? voltage and current values shown are nominal; exact values vary slightly with transistor parameters. electrical characteristics at 25c case temperature (unless otherwise noted) parameter test conditions min typ max unit v ceo(sus) collector-emitter sustaining voltage i c = 10 ma l = 25 mh (see note 2) TIPL760B tipl760c 500 550 v i ces collector-emitter cut-off current v ce = 1100 v v ce = 1200 v v ce = 1100 v v ce = 1200 v v be =0 v be =0 v be =0 v be =0 t c = 100c t c = 100c TIPL760B tipl760c TIPL760B tipl760c 50 50 200 200 a i ceo collector cut-off current v ce = 500 v v ce = 550 v i b =0 i b =0 TIPL760B tipl760c 50 50 a i ebo emitter cut-off current v eb = 10 v i c =0 1 ma h fe forward current transfer ratio v ce = 5 v i c = 0.5 a (see notes 3 and 4) 20 60 v ce(sat) collector-emitter saturation voltage i b = 0.4 a i b = 0.6 a i b = 0.6 a i c = 2a i c = 3a i c = 3a (see notes 3 and 4) t c = 100c 1.0 2.5 5.0 v v be(sat) base-emitter saturation voltage i b = 0.4 a i b = 0.6 a i b = 0.6 a i c = 2a i c = 3a i c = 3 a (see notes 3 and 4) t c = 100c 1.2 1.4 1.3 v f t current gain bandwidth product v ce = 10 v i c = 0.5 a f = 1 mhz 12 mhz c ob output capacitance v cb = 20 v i e = 0 f = 0.1 mhz 110 pf thermal characteristics parameter min typ max unit r jc junction to case thermal resistance 1.56 c/w inductive-load-switching characteristics at 25c case temperature (unless otherwise noted) parameter test conditions ? min typ max unit t sv voltage storage time i c = 3 a v be(off) = -5 v i b(on) = 0.6 a (see figures 1 and 2) 2.5 s t rv voltage rise time 300 ns t fi current fall time 250 ns t ti current tail time 150 ns t xo cross over time 400 ns t sv voltage storage time i c = 3 a v be(off) = -5 v i b(on) = 0.6 a t c = 100c (see figures 1 and 2) 3s t rv voltage rise time 500 ns t fi current fall time 250 ns t ti current tail time 150 ns t xo cross over time 750 ns
TIPL760B, tipl760c npn silicon power transistors 3
may 1989 - revised september 2002 specifications are subject to change without notice. parameter measurement information figure 1. inductive-load switching test circuit figure 2. inductive-load switching waveforms rb (on) v be(off) v clamp = 400 v v cc h 180 33 ? +5v d45h11 by205-400 by205-400 2n2222 by205-400 5x by205-400 by205-400 1 k ? 68 ? 1 k ? 47 ? 2n2904 d44h11 100 ? 270 ? v gen +5v 1 k ? 0.02 f tut 1 pf 33 ? adjust pw to obtain i c for i c < 6 a v cc = 50 v for i c 6 a v cc = 100 v base current a (90%) i b(on) i b collector voltage collector current d (90%) e (10%) f (2%) c b 90% 10% v ce i c(on) a - b = t sv b - c = t rv d - e = t fi e - f = t ti b - e = t xo notes: a. waveforms are monitored on an oscilloscope with the following c haracteristics: t r < 15 ns, r in > 10 ? , c in < 11.5 pf. b. resistors must be noninductive types.
TIPL760B, tipl760c npn silicon power transistors 4
may 1989 - revised september 2002 specifications are subject to change without notice. typical characteristics figure 3. figure 4. figure 5. figure 6. typical dc current gain vs collector current i c - collector current - a 01 10 10 h fe - typical dc current gain 10 10 100 tcp741aa v ce = 5 v t c = 125c t c = 25c t c = -65c collector-emitter saturation voltage vs base current i b - base current - a 0 05 10 15 20 v ce(sat) - collector-emitter saturation voltage - v 0 10 20 30 40 50 tcp741ab t c = 25c t c = 100c i c = 4 a i c = 3 a i c = 2 a i c = 1 a base-emitter saturation voltage vs base current i b - base current - a 0 02 04 06 08 10 12 14 16 v be(sat) - base-emitter saturation voltage - v 075 085 095 105 115 125 tcp741ac t c = 25c i c = 4 a i c = 3 a i c = 2 a i c = 1 a collector cut-off current vs case temperature t c - case temperature - c -60-30 0 306090120 i ces - collector cut-off current - a 0001 001 01 10 10 tcp741ao tipl760c v ce = 1200 v TIPL760B v ce = 1100 v
TIPL760B, tipl760c npn silicon power transistors 5
may 1989 - revised september 2002 specifications are subject to change without notice. maximum safe operating regions figure 7. thermal information figure 8. maximum forward-bias safe operating area v ce - collector-emitter voltage - v 10 10 100 1000 i c - collector current - a 001 0.1 10 10 sap741af t p = 10 s t p = 100 s t p = 1 ms t p = 10 ms dc operation TIPL760B tipl760c thermal response junction to case vs power pulse duration t1 - power pulse duration - s 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 z jc /r jc - normalised transient thermal impedance 001 01 10 tcp741am t1 t2 duty cycle = t1/t2 read time at end of t1, t j(max) - t c = p d(peak) r jc(max) z jc r jc ( ) 5% 10% 20% 50% 0%
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